2SC2053 transistor equivalent, silicon npn transistor.
* High power gain: Gpe ≥ 15.7dB @Vcc = 13.5V, Po = 150mW, f = 175MHz
* Emitter ballasted construction for reliability and performance.
* Manufactured incorpor.
Features
* High power gain: Gpe ≥ 15.7dB @Vcc = 13.5V, Po = 150mW, f = 175MHz
* Emitter ballasted construction .
The Eleflow 2SC2053 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications.
Features
* High power gain: Gpe ≥ 15.7dB @Vcc = 13.5V, Po = 150mW, f = 175MHz
* E.
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