LP3407LT1G-ES datasheet, mosfet equivalent, ElecSuper

Features and benefits

* 30V, RDS(ON)=46mΩ(Typ.) @VGS=-10V RDS(ON)=62mΩ(Typ.) @VGS=-4.5V
* Fast Switching
* High density cell design for low RDS(on)
* Material: Halogen free

Application

* PWM applications
* Load switch
* Power management in portable/desktop PCs
* DC/DC conversion 4. Orde.

Description

The LP3407LT1G-ES is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. S.

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