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ECW20P20-Z
P CHANNEL LATERAL MOSFET
P Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers High voltage rating - 200V TO-264 plastic package Enhanced oscillation suppression in multi-device applications Complementary N-channel available – ECW20N20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
-200V
VGSS Gate – Source Voltage
+/-20V
ID Continuous Drain Current
-16A
IDR Body Drain Diode Current
-16A
PD Allowable Power Dissipation* Tcase = 25°C Tch Channel Temperature
250W 150°C
Tstg Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
0.
ECW20P20-Z Datasheet
