SPA-2118 Datasheet | Unknown Manufacturer

Description Sirenza Microdevices’ SPA-2118 is a high efficiency Ga As Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. 850 MHz 1 Watt Power Amplifier with Active Bias Product Features - High Linearity Performance: +20.7 d Bm IS-95 CDMA Channel Power at -55 d Bc ACP +47 d Bm typ. OIP3 VC1 VBIAS RFIN VPC2 Active Bias RFOUT/ VC2 - On-chip Active Bias Control - High Gain: 33 d B Typ. - Patented High Reliability Ga As HBT Technology - Surface-Mountable Plastic Package Applications - IS-95 CDMA Systems - Multi-Carrier Applications - AMPS, ISM Applications Symbol f0 P 1d B AC P S 21 VSWR OIP3 NF ICC VCC Rth j-l Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25ºC, VCC= 5.0V Frequency of Operation Output Power at 1d B pression Adjacent Channel Power IS-95 @880 MHz, ±885 KHz offset, POUT=20.7 d Bm Small Signal Gain, 880 MHz Input VSWR Output Third Order Intercept Point Power out per tone = +14 d Bm Noise Figure Device Current IBIAS = 10m A, IC1 = 70m A, IC2 = 320m A Units MHz d B m d B c d B d B m d B m A V ºC/W Min. 810 Typ. 900 29.0 -55.0 Max. 960 -52.0 34.5 33.0 1.5:1 47.0 5.0 360 4.75 400 5.0 31 425 5.25 Device Voltage Thermal Resistance (junction - lead), TL = 85ºC The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No...