SNA-586 Datasheet | Unknown Manufacturer

Product Description Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65m A is 32.5 d Bm. These unconditionally stable amplifiers provide 18 d B of gain and 18.4 d Bm of 1d B pressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET. 25 20 Preliminary Preliminary DC-5 GHz, Cascadable Ga As HBT MMIC Amplifier NGA-586 Remended for New Designs Small Signal Gain vs. Frequency @ ID=65m A d B 15 10 5 0 2 Product Features - High Output IP3: 32.5 d Bm @ 850 MHz - Cascadable 50 Ohm Gain Block - Patented Ga As HBT Technology - Operates From Single Supply Frequency GHz Applications - Cellular, PCS, CDPD, Wireless Data, SONET Units Min. Typ. 17.6 18.4 18.4 32.5 31.6 31.6 17.6 19.6 18.1 17.4 5000 1.4:1 1.4:1 22.3 21.6 21.3 4.0 4.4 4.9 254 5.4 Max. Electrical Specifications Symbol Parameters: Test Conditions: GHz Z0 = 50 Ohms, ID = 65 m A, T = 25°C Output Power at 1d B pression f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz P1d B d Bm d Bm d Bm d Bm d Bm d Bm d B d B d B MHz IP3 Third Order Intercept Point Power out per tone = 0 d Bm S21 Bandwidth S11 S22 S12 NF VD Rth,j-l Small Signal Gain (Determined by S11, S22 Values) Input VSWR Output VSWR Reverse Isolation Noise Figure, ZS = 50 Ohms Device Voltage Thermal Resistance (junction - lead) f = DC-5000 MHz f = DC-5000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f =...