NDS9405 mosfet equivalent, single p-channel mosfet.
-4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V
High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount pac.
such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.
These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is been especially tailored to minimize on-state resistance, provide superio.
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