Description
These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
Features
- -4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V
High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________
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Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS VGSS ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous TA = 25°C
- Continuous TA = 70°C
- Pulsed
TA = 25°C
Maximu.
NDS9405 Datasheet
