NDS9405
Description
These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
-4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V
High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package.
54 63 72 81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS VGSS ID
Drain-Source Voltage
Gate-Source...
