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HY860F
ABSOLUTE MAXIMUM RATINGS AT TA=25°C
PARAMETER IR Diode continuous Forward Current IR Diode Reverse Voltage Transistor Collector Current Transistor Power Dissipation IR Diode Peak Forward Current (Pulse Wide= 10uS, 300 pps ) Diode Power Dissipation Phototransistor Collector-Emitter Voltage Phototransistor Emitter- Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm(.063”)From Case]
MAXIMUM RATING 50 5 20 75 1 100 30
UNIT mA V mA mW (No c 1) A mW(No. c1) V
5V
-55 °C to +100 °C -55 °C to +100°C
260°C for 5 seconds
Note1. Derate Linearly 1.33mW/C from 25°C
NOTES: 1. All dimensions are in millimeters(inches) 2. Tolerance is ±0.25mm (.010”) unless otherwise noted.
HY860F Datasheet
