The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HY860F
ABSOLUTE MAXIMUM RATINGS AT TA=25°C
PARAMETER IR Diode continuous Forward Current IR Diode Reverse Voltage Transistor Collector Current Transistor Power Dissipation IR Diode Peak Forward Current (Pulse Wide= 10uS, 300 pps ) Diode Power Dissipation Phototransistor Collector-Emitter Voltage Phototransistor Emitter- Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm(.063”)From Case]
MAXIMUM RATING 50 5 20 75 1 100 30
UNIT mA V mA mW (No c 1) A mW(No. c1) V
5V
-55 °C to +100 °C -55 °C to +100°C
260°C for 5 seconds
Note1. Derate Linearly 1.33mW/C from 25°C
NOTES: 1. All dimensions are in millimeters(inches) 2. Tolerance is ±0.25mm (.010”) unless otherwise noted.
HY860F Datasheet
