2N5642 - NPN SILICON RF POWER TRANSISTORS

Download the 2N5642 datasheet PDF. This datasheet also covers the 2N5641 variant, as both devices belong to the same npn silicon rf power transistors family and are provided as variant models within a single manufacturer datasheet.

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2N5642 npn silicon rf power transistors by Unknown Manufacturer - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N5641-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N5642
Manufacturer	Unknown Manufacturer
File Size	346.74 KB
Description	NPN SILICON RF POWER TRANSISTORS
Datasheet	2N5642 Datasheet

📁 Similar Datasheet

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2N5640	SWITCHING JFET	Motorola

Other Datasheets by Unknown Manufacturer

Part Number	Description
2N5641	NPN SILICON RF POWER TRANSISTORS
2N5643	NPN SILICON RF POWER TRANSISTORS
2N5644	NPN SILICON RF POWER TRANSISTOR
2N5645	NPN SILICON RF POWER TRANSISTOR
2N5646	NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5641 (SILICON) 2N5642 2N5643 NPN SILICON RF POWER TRANSISTORS . designed for VH F power amplifier or oscillator applications in military and industrial equipment. These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Stripline packaging for lower lead inductance and better broad· band capability. • Ceramic Packaging • Specified 2B Volt, 175 MHz Characteristics2N5641 - 7.0 Watts Output Power at B.4 dB Gain 2N5642 - 20 Watts Output Power at 8.2 dB Gain 2N5643 - 40 Watts Output Power at 7.6 dB Gain -MAXIMUM RATINGS Rating Collect.,..