2NS271 (SILICON)
NPN SILICON ANNULAR AVALANCHE TRANSISTOR
.. designed for AVALANCHE mode operation for the generation of high-current pulses with nanosecond rise times. Ideal for applications such as laser diodes, high-current pulse generators, vacuum tube driver and other applications requiring ultra high-speed, highvoltage or high-current pulses.
• Rise Time - tr = 1.0 ns,(Max)
• Delay Time - td = 5.0 ns (Max) • Output Pulse Amplitude -
Vo = 130 Vdc (Typ) @ RL = 50 Ohms
NPN SILICON AVALANCHE SWITCHING TRANSISTOR
2N5271 Datasheet
