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2N5219 (SILICON)
NPN SILICON ANNULAR TRANSISTOR
· .. designed for general-purpose amplifier applications.
• Low Collector-Emitter Saturation Voltage VCE(sat): 0.4 Vdc (Max) @ IC: 10 mAde
• High Current-Gain-Bandwidth Product fT: 150 MHz (Min) @ IC: 10 mAde
• Low Collector-Base Capacitance Ccb: 4.0 pF (Max)@ VCE: 10 Vdc
NPN SILICON AMPLIFIER TRANSISTOR
*MAXIMUM RATINGS Rating
Coliector~Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Callector Current - Continuous Total Power Dissipation @ T A = 25°C
Derate above 2SoC Total Power Dissipation @ TC == 2SoC
Derate above 2SoC
Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB
IC
Po
Po
TJ,Tstg
Value 15
20 3.0 100 350 2.8 1.0 8.
2N5219 Datasheet
