2N5058S transistors equivalent, npn silicon annular transistors.
Download (Size : 107.34KB)
* High Collector* Emitter Breakdown Voltage BVCEO = 300 Vdc (Min) - 2N5058S * DC Current Gain Specified 5.0.
Image gallery
TAGS
Manufacturer
Related datasheet
2N5058
2N5050
2N5051
2N5052
2N5056
2N5057
2N5059
2N50-CB
2N50-SE
2N5002
2N5003
2N5004
2N5005