ET-20N50 mosfet equivalent, n-channel mosfet.
* RDS(on) (Max 0.26 Ω )@VGS=10V
* Gate Charge (Typical 90nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction T.
This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high effic.
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