M14D5121632A-1.8BG2A Datasheet | Elite Semiconductor Microelectronics Technology

Features - JEDEC Standard - VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V - Internal pipelined double-data-rate architecture; two data access per clock cycle - Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. - On-chip DLL - Differential clock inputs (CLK and CLK ) - DLL aligns DQ and DQS transition with CLK transition - Quad bank operation - CAS Latency : 3, 4, 5, 6, 7, 8, 9 - Additive Latency: 0, 1, 2, 3, 4, 5, 6, 7 - Burst Type : Sequential and Interleave - Burst Length : 4, 8 - All inputs except data & DM are sampled at the rising edge of the system clock(CLK) - Data I/O transitions on both edges of data strobe (DQS) - DQS is edge-aligned with data for READ; center-aligned with data for WRITE - Data mask (DM) for write masking only - Off-Chip-Driver (OCD) impedance adjustment - On-Die-Termination for better signal quality - Special function support - 50/ 75/ 150 ohm ODT - High Temperature Self refresh rate enable - Duty Cycle Corrector - Partial Array Self Refresh (PASR) - Auto & Self refresh - Refresh cycle : - 8192 cycles/64ms (7.8μ s refresh interval) at 0 ℃ ≦ TC ≦ +85 ℃ - 8192 cycles/32ms (3.9μ s refresh interval) at +85 ℃ ＜ TC ≦ +95 ℃ - SSTL_18 interface - If t CK < 1.875ns, the device can not support Write with Auto Precharge function. Elite Semiconductor Microelectronics Technology Inc. Publication Date : Jul. 2022 Revision : 1.2 1/64 ESMT M14D5121632A (2A) Ordering Information: Product ID M14D5121632A -1.5BG2A M14D5121632A -1.8BG2A M14D5121632A -2.5BG2A M14D5121632A -1.8BBG2A M14D5121632A -2.5BBG2A Max...