M14D5121632A-1.8BG2A, M14D5121632A-1.5BG2A - DDR-II SDRAM

ESMT

M14D5121632A-1.8BG2A Datasheet Preview — This datasheet PDF includes multiple part numbers: M14D5121632A-1.8BG2A, M14D5121632A-1.5BG2A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	M14D5121632A-1.8BG2A, M14D5121632A-1.5BG2A
Manufacturer	ESMT
File Size	2.04 MB
Description	DDR-II SDRAM
Datasheet	M14D5121632A-1.5BG2A-ESMT.pdf
Note	This datasheet PDF includes multiple part numbers: M14D5121632A-1.8BG2A, M14D5121632A-1.5BG2A. Please refer to the document for exact specifications by model.

M14D5121632A-1.8BG2A Product details

Description

Pin Name A0~A12, BA0,BA1 DQ0~DQ15 RAS CAS WE VSS VDD DQS, DQS (LDQS, LDQS UDQS, UDQS) ODT NC Function Address inputs - Row address A0~A12 - Column address A0~A9 A10/AP : Auto Precharge BA0, BA1 : Bank selects (4 Banks) Data-in/Data-out Command input Command input Command input Ground Power Pin Name Function DM (LDM, UDM) DM is an input mask signal for write data.LDM is DM for DQ0~DQ7 and UDM is DM for DQ8~DQ15. CLK, CLK CKE CS VDDQ VSSQ VREF Differential clock input Clock enable Chip se

Features

JEDEC Standard.
VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V.
Internal pipelined double-data-rate architecture; two data access per clock cycle.
Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
On-chip DLL.
Differential clock inputs (CLK and CLK ).
DLL aligns DQ and DQS transition with CLK transition.
Quad bank operation.
CAS Latency : 3, 4, 5, 6, 7, 8, 9.
Additive Latency: 0, 1, 2, 3, 4,.

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Other Datasheets by ESMT

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Published: Mar 25, 2019 |