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M12L64164A-6BG2C - 1M x 16 Bit x 4 Banks Synchronous DRAM

Download the M12L64164A-6BG2C datasheet PDF. This datasheet also covers the M12L64164A variant, as both devices belong to the same 1m x 16 bit x 4 banks synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock DQM for masking Auto & self refresh 64ms refresh period (4K cycle) - 15.6 µ s refresh interval M12L64164A (2C) 1M x 16 Bit x 4 Banks Synchronous DRAM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M12L64164A_EliteSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number M12L64164A-6BG2C
Manufacturer ESMT
File Size 1.20 MB
Description 1M x 16 Bit x 4 Banks Synchronous DRAM
Datasheet download datasheet M12L64164A-6BG2C Datasheet

Full PDF Text Transcription

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ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock DQM for masking Auto & self refresh 64ms refresh period (4K cycle) - 15.6 µ s refresh interval M12L64164A (2C) 1M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID Max Freq.
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