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M12L32321A-6BG2G - 512K x 32Bit x 2Banks Synchronous DRAM

Download the M12L32321A-6BG2G datasheet PDF. This datasheet also covers the M12L32321A variant, as both devices belong to the same 512k x 32bit x 2banks synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

The M12L32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Features

  • JEDEC standard 3.3V ± 0.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Dual banks operation.
  • MRS cycle with address key programs - CAS Latency (2 & 3 ) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst Read Single-bit Write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (4K cycle).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M12L32321A-ESMT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number M12L32321A-6BG2G
Manufacturer ESMT
File Size 526.90 KB
Description 512K x 32Bit x 2Banks Synchronous DRAM
Datasheet download datasheet M12L32321A-6BG2G Datasheet

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Other Datasheets by ESMT

Part Number Description
M12L32321A-5BG2G 512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-7BG2G 512K x 32Bit x 2Banks Synchronous DRAM
M12L32162A-7BG 1M x 16Bit x 2Banks Synchronous DRAM
M12L32162A-7TG 1M x 16Bit x 2Banks Synchronous DRAM
M12L128168A-5BG 2M x 16 Bit x 4 Banks Synchronous DRAM

Full PDF Text Transcription

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ESMT SDRAM M12L32321A (2G) 512K x 32Bit x 2Banks Synchronous DRAM FEATURES  JEDEC standard 3.3V ± 0.3V power supply  LVTTL compatible with multiplexed address  Dual banks operation  MRS cycle with address key programs - CAS Latency (2 & 3 ) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)  All inputs are sampled at the positive going edge of the system clock  Burst Read Single-bit Write operation  DQM for masking  Auto & self refresh  64ms refresh period (4K cycle) GENERAL DESCRIPTION The M12L32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.
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