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M12L2561616A-7BG2S Datasheet

Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

This datasheet includes multiple variants, all published together in a single manufacturer document.

M12L2561616A-7BG2S Overview

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance...

M12L2561616A-7BG2S Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs
  • CAS Latency (2 & 3)
  • Burst Length (1, 2, 4, 8 & full page)
  • Burst Type (Sequential & Interleave)
  • All inputs are sampled at the positive going edge of the system clock
  • Burst Read single write operation
  • DQM for masking

M12L2561616A-7BG2S Distributor