Datasheet Summary
ESMT
Flash
Features
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization
- Memory Cell Array: (256M + 16M) x 8bit
- Data Register: (2K + 64) x 8bit Automatic Program and Erase
- Page Program: (2K + 64) byte
- Block Erase: (128K + 4K) byte Page Read Operation
- Page Size: (2K + 64) bytes
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time
- Program time: 400us (Typ.)
- Block Erase time: 3ms (Typ.) mand/Address/Data Multiplexed I/O Port Hardware Data Protection
- Program/Erase Lockout During Power Transitions
F59L2G81LA
2 Gbit (256M x 8) 3.3V NAND Flash Memory
Reliable CMOS Floating Gate Technology
- ECC Requirement: 1bit/528Byte
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