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F59L2G81LA-25BG - 2 Gbit (256M x 8) 3.3V NAND Flash Memory

Download the F59L2G81LA-25BG datasheet PDF. This datasheet also covers the F59L2G81LA-25TG variant, as both devices belong to the same 2 gbit (256m x 8) 3.3v nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us (Typ. ) - Block Erase time: 3ms (Typ. ) Command/Address/Data Multiplexed I/O Port Hardware Data Protection -.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F59L2G81LA-25TG-ESMT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F59L2G81LA-25BG
Manufacturer ESMT
File Size 1.69 MB
Description 2 Gbit (256M x 8) 3.3V NAND Flash Memory
Datasheet download datasheet F59L2G81LA-25BG Datasheet

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Other Datasheets by ESMT

Part Number Description
F59L2G81LA-25TG 2 Gbit (256M x 8) 3.3V NAND Flash Memory
F59L2G81KA 2-Gbit 3.3V NAND Flash Memory
F59L2G81KA-25BCG2N 2-Gbit 3.3V NAND Flash Memory
F59L2G81KA-25BG2N 2-Gbit 3.3V NAND Flash Memory
F59L2G81KA-25TG2N 2-Gbit 3.3V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us (Typ.) - Block Erase time: 3ms (Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L2G81LA 2 Gbit (256M x 8) 3.
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