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F59D8G81XB - 8-Gbit 1.8V NAND Flash Memory

General Description

The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications.

NAND Flash devices include an asynchronous data interface for high-performance I/O operations.

Key Features

  • Density.
  • 8 Gb (4 Gb x 2).
  • Voltage Supply: 1.8V (1.7 V ~ 1.95V).
  • Open NAND Flash Interface (ONFI) 1.0-compliant.
  • Single-level cell (SLC) technology.
  • Organization.
  • Page size: 4352 bytes (4096 + 256 bytes).
  • Block size: 64 pages.
  • Number of planes: 1.
  • Asynchronous I/O performance.
  • tRC/ tWC: 30ns.
  • Array performance.
  • Read page: 115μs (MAX) with on-die ECC enabled.
  • Read page: 30μs (MAX) with on-die ECC dis.

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📁 Similar Datasheet

Part Number Description Manufacturer
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F59D2G161A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D2G81A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory Elite Semiconductor
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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59D8G81KSA 1.8V NAND Flash Memory
F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45TG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT (Preliminary) F59D8G81XB (2X) Flash FEATURES  Density – 8 Gb (4 Gb x 2)  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Open NAND Flash Interface (ONFI) 1.