F59D1G81MB-45TG2M memory equivalent, 1.8v nand flash memory.
* Voltage Supply: 1.8V (1.7 V ~ 1.95V)
* Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M.
The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be eras.
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