F59D1G81MB-45BG2M datasheet, memory equivalent, ESMT

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datasheet Download (Size : 2.37MB)

Features and benefits

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)
* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M.

Description

The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be eras.

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