• Part: F50D2G41LB-66YG2M
  • Description: 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.25 MB
Download F50D2G41LB-66YG2M Datasheet PDF
F50D2G41LB-66YG2M datasheet preview
F50D2G41LB-66YG2M page 2
Page 2
F50D2G41LB-66YG2M page 3
Page 3

F50D2G41LB-66YG2M Key Features

  • Voltage Supply: 1.8V (1.7V~1.95V)
  • Organization
  • Memory Cell Array: (128M + 4M) x 8bit
  • Data Register: (2K + 64) x 8bit
  • Automatic Program and Erase
  • Page Program: (2K + 64) Byte
  • Block Erase: (128K + 4K) Byte
  • Page Read Operation
  • Page Size: (2K + 64) Byte
  • Read from Cell to Register with Internal ECC: 100us

Related Elite Semiconductor Microelectronics Technology Datasheets

Part Number Description
F50D2G41LB-50YG2M 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
F50D2G41XA 1.8V 2-Gbit SPI-NAND Flash Memory
F50D1G41LB 1.8V 1-Gbit SPI-NAND Flash Memory
F50D1G41LB-50YG2M 1.8V 1 Gbit SPI-NAND Flash Memory
F50D1G41LB-50YG2ME 1.8V 1 Gbit SPI-NAND Flash Memory