F50D1G41LB-66YG2M memory equivalent, 1.8v 1 gbit spi-nand flash memory.
* Voltage Supply: 1.8V (1.7V~1.95V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - .
The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum. The device is a 1Gb SLC SPI-NAND Fl.
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