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F50D1G41LB-50YG2ME Datasheet, ESMT

F50D1G41LB-50YG2ME memory equivalent, 1.8v 1 gbit spi-nand flash memory.

F50D1G41LB-50YG2ME Avg. rating / M : 1.0 rating-13

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F50D1G41LB-50YG2ME Datasheet

Features and benefits


* Voltage Supply: 1.8V (1.7V~1.95V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - .

Description

The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum. The device is a 1Gb SLC SPI-NAND Fl.

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TAGS

F50D1G41LB-50YG2ME
1.8V
Gbit
SPI-NAND
Flash
Memory
F50D1G41LB-50YG2M
F50D1G41LB-66YG2M
F50D1G41LB-66YG2ME
ESMT

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