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F25L04PA-100PG2D - 3V Only 4 Mbit Serial Flash Memory

Download the F25L04PA-100PG2D datasheet PDF. This datasheet also covers the F25L04PA-50PG2D variant, as both devices belong to the same 3v only 4 mbit serial flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • S.
  • Single supply voltage 2.3~3.6V.
  • Standard, Dual SPI.
  • Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz (100MHz / 172MHz equivalent Dual SPI).
  • Low power consumption - Active current: 20 mA - Standby current: 25 μ A - Deep Power Down current: 10 μ A.
  • Reliability - 100,000 typical program/erase cycles - 20 years Data Retention.
  • Program - Page programming time: 0.7 ms (typical) F25L04PA (2D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F25L04PA-50PG2D-ESMT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F25L04PA-100PG2D
Manufacturer ESMT
File Size 332.95 KB
Description 3V Only 4 Mbit Serial Flash Memory
Datasheet download datasheet F25L04PA-100PG2D Datasheet

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Other Datasheets by ESMT

Part Number Description
F25L04PA-100PG 3V Only 4 Mbit Serial Flash Memory
F25L04PA-100PAG 3V Only 4 Mbit Serial Flash Memory
F25L04PA-100PAG2D 3V Only 4 Mbit Serial Flash Memory
F25L04PA-100DG 3V Only 4 Mbit Serial Flash Memory
F25L04PA-100HG 3V Only 4 Mbit Serial Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Flash  FEATURES  Single supply voltage 2.3~3.6V  Standard, Dual SPI  Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz (100MHz / 172MHz equivalent Dual SPI)  Low power consumption - Active current: 20 mA - Standby current: 25 μ A - Deep Power Down current: 10 μ A  Reliability - 100,000 typical program/erase cycles - 20 years Data Retention  Program - Page programming time: 0.7 ms (typical) F25L04PA (2D) 3V Only 4 Mbit Serial Flash Memory with Dual Output  Erase - Chip erase time 1 sec (typical) - Block erase time 0.
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