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F25L04PA-100PAG - 3V Only 4 Mbit Serial Flash Memory

Download the F25L04PA-100PAG datasheet PDF. This datasheet also covers the F25L04PA variant, as both devices belong to the same 3v only 4 mbit serial flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • S.
  • Single supply voltage 2.3~3.6V.
  • Standard, Dual SPI.
  • Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz/ 100MHz (100MHz / 172MHz/ 200MHz equivalent Dual SPI).
  • Low power consumption - Active current: 25 mA - Standby current: 30 μ A - Deep Power Down current: 5 μ A.
  • Reliability - 100,000 typical program/erase cycles - 20 years Data Retention.
  • Program - Byte programming time: 7 μ s (typical).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F25L04PA-EliteSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F25L04PA-100PAG
Manufacturer ESMT
File Size 340.50 KB
Description 3V Only 4 Mbit Serial Flash Memory
Datasheet download datasheet F25L04PA-100PAG Datasheet

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Other Datasheets by ESMT

Part Number Description
F25L04PA-100PAG2D 3V Only 4 Mbit Serial Flash Memory
F25L04PA-100PG 3V Only 4 Mbit Serial Flash Memory
F25L04PA-100PG2D 3V Only 4 Mbit Serial Flash Memory
F25L04PA-100DG 3V Only 4 Mbit Serial Flash Memory
F25L04PA-100HG 3V Only 4 Mbit Serial Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Flash F25L04PA 3V Only 4 Mbit Serial Flash Memory with Dual Output  FEATURES  Single supply voltage 2.3~3.6V  Standard, Dual SPI  Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz/ 100MHz (100MHz / 172MHz/ 200MHz equivalent Dual SPI)  Low power consumption - Active current: 25 mA - Standby current: 30 μ A - Deep Power Down current: 5 μ A  Reliability - 100,000 typical program/erase cycles - 20 years Data Retention  Program - Byte programming time: 7 μ s (typical) - Page programming time: 1.5 ms (typical)  Erase - Chip erase time 3.5 sec (typical) - Block erase time 0.