The F25L02PA is a 2Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory
devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 1,024 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
is divided into 64 uniform sectors with 4K byte each; 4 uniform
blocks with 64K byte each. Sectors can be erased individually
without affecting the data in other sectors. Blocks can be erased
individually without affecting the data in other blocks. Whole chip
erase capabilities provide the flexibility to revise the data in the
device. The device has Sector, Block or Chip Erase but no page
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
8- Lead SOIC
(SOIC 8L, 150mil Body, 1.27mm Pin Pitch)
(SOIC 8L, 208mil Body, 1.27mm Pin Pitch)
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2013