EPC2112 egan equivalent, integrated gate driver egan.
* Integrated Gate Driver
– Low Propagation Delay
– Up to 7 MHz Operation
– Operates from 5 V Supply
* 200 V, 40-m.
* Wireless Power (Highly Resonant and Inductive)
* High Frequency DC-DC Conversion
Schematic Diagram
DESCRIPT.
The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA.
The EPC2112 monolithic IC enables desi.
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