Part EN25S80B-2S
Description 8 Megabit 1.8V Serial Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 2.08 MB
Elite Semiconductor Microelectronics Technology
EN25S80B-2S

Overview

  • Single power supply operation - Full voltage range: 1.65-1.95 volt
  • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3
  • 8 M-bit Serial Flash - 8 M-bit / 1024 KByte /4096 pages - 256 bytes per programmable page
  • Standard, Dual or Quad SPI - Standard SPI: CLK, CS#, DI, DO, WP#, HOLD# - Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD# - Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3 - Configurable dummy cycle number
  • High performance - Normal read - 50MHz - Fast read - Standard SPI: 104MHz with 1 dummy bytes - Dual SPI: 104MHz with 1 dummy bytes - Quad SPI: 104MHz with 3 dummy bytes
  • Low power consumption - 4.5 mA typical active current - 0.1 A typical power down current
  • Uniform Sector Architecture: - 256 sectors of 4-Kbyte - 32 blocks of 32-Kbyte - 16 blocks of 64-Kbyte - Any sector or block can be erased individually
  • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin
  • High performance program/erase speed - Page program time: 0.5ms typical - Sector erase time: 40ms typical - Half Block erase time 120ms typical - Block erase time 150ms typical - Chip erase time: 4 seconds typical
  • Write Suspend and Write Resume