RBV1008 Datasheet | EIC Semiconductor

FEATURES : - - - - - - - - High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~ ~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : - Case : Reliable low cost construction utilizing molded plastic technique - Epoxy : UL94V-O rate flame retardant - Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed - Polarity : Polarity symbols marked on case - Mounting position : Any - Weight : 7.7 grams 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at I F = 5.0 Amps. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Ta = 100 °C SYMBOL RBV 1000 50 35 50 RBV 1001 100 70 100 RBV 1002 200 140 200 RBV 1004 400 280 400 10 RBV 1006 600 420 600 RBV 1008 800 560 800 17.5 ± 0.5 RBV 1010 1000 700 1000 UNIT Volts Volts Volts Amps. Amps. A S Volts µA µA °C/W °C °C VRRM...