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EIC discrete Semiconductors

FKBL401 Datasheet Preview

FKBL401 Datasheet

FAST RECOVERY BRIDGE RECTIFIERS

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FKBL400 - FKBL410
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
KBL
FEATURES :
* High case dielectric strength of 2000 V DC
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 5.15 grams
0.77 (19.56)
0.73 (18.54)
0.825 (20.95)
0.605 (15.36)
+ AC AC
1.00 (25.4)
MIN.
0.085 (2.16)
0.065 (1.65)
0.052 (1.32)
0.048 (1.22)
0.200 (5.08)
0.190 (4.82)
0.265 (6.73 )
0.235 (5.97)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FKBL
400
FKBL
401
FKBL
402
FKBL
404
FKBL
406
FKBL
408
FKBL
410
UNIT
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 50 °C
I F(AV)
4.0 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
IFSM
I2t
150 Amps.
166 A2S
Maximum Forward Voltage drop per Diode at IF = 4.0 Amps.
VF
1.4 Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
IR
I R(H)
10 µA
1.0 mA
Maximum Reverse Recovery Time (Note 1)
Trr 150 250 500 ns
Typical Thermal Resistance per Diode (Note 2)
Operating Junction Temperature Range
RθJC
TJ
3.3
- 50 to + 150
°C/W
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to case with mounted on a 2.0" X 1.6"x 0.3" ( 5 cm. x 4 cm. x 0.8cm ) Al. Plate.
UPDATE : APRIL 21, 1998




EIC discrete Semiconductors

FKBL401 Datasheet Preview

FKBL401 Datasheet

FAST RECOVERY BRIDGE RECTIFIERS

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( FKBL400 - FKBL410 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+ 0.5 A
Trr
+
50 Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25
1 OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
5
Heatsink Mounting, Tc
2.0" X 1.6" X 0.3"
4 ( 5.0cm X 4.0cm X 0.8cm )Al.Plate
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
Tc = 50 °C
120
3 90
2 60
1
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150
CASE TEMPERATURE, ( °C)
175
30
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 µs
1% Duty Cycle
TJ = 25 °C
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01 0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)


Part Number FKBL401
Description FAST RECOVERY BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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