FBR801 Datasheet | EIC Semiconductor

FEATURES : - - - - - - - High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY BRIDGE RECTIFIERS BR10 φ 0.158 (4.00) 0.142 (3.60) 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC 0.520 (13.20) 0.480 (12.20) AC 0.052 (1.32) 0.048 (1.22) MECHANICAL DATA : - Case : Reliable low cost construction utilizing molded plastic technique - Epoxy : UL94V-O rate flame retardant - Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed - Polarity : Polarity symbols marked on case - Mounting position : Any - Weight : 6.1 grams 0.30 (7.62) 0.25 (6.35) 0.75 (19.1) Min. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 50 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 4.0 Amps. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IF(AV) IFSM It VF IR I R(H) Trr RθJC TJ T STG FBR FBR FBR FBR FBR FBR FBR UNITS 800 801 802 804 806 808 810 50 35 50 100 70 100 200 140 200 400 280 400 8.0 200 160 1.3 10 200 150 2.5 - 50 to + 150 - 50 to + 150 250 500 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps. Amps. A S Volts µA µA ns °C/W °C °C Notes : 1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal Resistance from junction to...