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EIC discrete Semiconductors

D3SBA20 Datasheet Preview

D3SBA20 Datasheet

SILICON BRIDGE RECTIFIER

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D3SBA10 ~ D3SBA80
SILICON BRIDGE RECTIFIER
PRV : 100 ~ 800 Volts
Io : 4.0 Amperes
0.150 (3.8)
C3
0.996 (25.3)
0.134 (3.4)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
FEATURES :
www.DataSh*eeHt4iUg.hcocmurrent capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
+~ ~
0.303 (7.7)
0.287 (7.3)
0.043 (1.1)
0.035 (0.9)
0.032 (0.8)
0.043 (1.1)
0.075 (1.9)
0.060 (1.5)
0.114 (2.9)
0.098 (2.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Reverse Voltage
Maximum Average Forward Current
(50Hz Sine wave, R-load)
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Current Squared Time at 1ms t < 10 ms, Tc=25°C
Maximum Forward Voltage per Diode at IF = 2.0 A.
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case
Maximum Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
D3SBA D3SBA D3SBA D3SBA D3SBA
10 20 40 60 80
VRM
100 200 400 600 800
IF(AV)
4 (With heatsink, Tc = 108°C)
2.3 (Without heatsink, Ta = 25°C)
UNIT
V
A
IFSM 80 A
I2t 32 A2S
VF 1.05 V
IR 10 µA
RθJC
RθJA
TJ
TSTG
5.5 (With heatsink)
30 (Without heatsink)
150
- 40 to + 150
°C/W
°C/W
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005




EIC discrete Semiconductors

D3SBA20 Datasheet Preview

D3SBA20 Datasheet

SILICON BRIDGE RECTIFIER

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( D3SBA10 ~ D3SBA80)
www.DataSheet4U.com
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
6
5 Sine wave, R-load on heatsink
4
3
2
1
0
80
90 100 110 120 130 140 150
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
1.0
TL = 25 °C
0.1
0.5
0.6 0.7 0.8 0.9 1.0 1.1
FORWARD VOLTAGE, VOLTS
1.2
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
120
Non-repetitive
100 TJ = 25°C
80
60
40
20
0
12
4 6 10 20 40 60 10
NUMBER OF CYCLES
FIG.4 - POWER DISSIPATION
14
12 Sine wave
TJ = 150 °C
10
8
6
4
2
0
0 1 2 3 4 567
AVERAGE RECTIFIED
CURRENT, AMPS
Page 2 of 2
Rev. 02 : March 25, 2005


Part Number D3SBA20
Description SILICON BRIDGE RECTIFIER
Maker EIC discrete Semiconductors
Total Page 2 Pages
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EIC discrete Semiconductors





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