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EIC discrete Semiconductors

1N5917A Datasheet Preview

1N5917A Datasheet

SILICON ZENER DIODES

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1N5913A - 1N5957A
SILICON ZENER DIODES
VZ : 3.3 - 240 Volts
PD : 1.5 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
DO - 41
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at TL = 75 ° C (Note1)
Maximum Forward Voltage at IF = 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Symbol
PD
VF
RθJA
TJ
Ts
Note :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Value
1.5
1.5
130
- 55 to + 175
- 55 to + 175
Fig. 1 POWER TEMPERATURE DERATING CURVE
1.5
1.2
L = 3/8" (9.5mm)
0.9
0.6
0.3
Unit
Watts
Volts
K/W
°C
°C
0 25 50 75 100 125 150 175
TL, LEAD TEMPERATURE (°C)
UPDATE : SEPTEMBER 9, 2000




EIC discrete Semiconductors

1N5917A Datasheet Preview

1N5917A Datasheet

SILICON ZENER DIODES

No Preview Available !

ELECTRICAL CHARACTERISTICS
Rating at = 25 °C ambient temperature unless otherwise specified
Nominal Zener
Maximum Zener
TYPE
Voltage
Impedance
VZ @ IZT
IZT ZZT @ IZT ZZK @ IZK
(V) (mA) ()
()
IZK
(mA)
1N5913A
1N5914A
1N5915A
1N5916A
1N5917A
1N5918A
1N5919A
1N5920A
1N5921A
1N5922A
3.3 113.6 10
500 1.0
3.6 104.2 9.0 500 1.0
3.9 96.1 7.5 500 1.0
4.3 87.2 6.0 500 1.0
4.7 79.8 5.0 500 1.0
5.1 73.5 4.0 500 1.0
5.6 66.9 2.0 500 1.0
6.2 60.5 2.0 200 1.0
6.8 55.1 2.5 200 1.0
7.5 50.0 3.0 400 0.5
1N5923A
1N5924A
1N5925A
1N5926A
1N5927A
1N5928A
1N5929A
1N5930A
1N5931A
1N5932A
1N5933A
8.2 45.7 3.5 400 0.5
9.1 41.2 4.0 500 0.5
10 37.5 4.5 500 0.25
11 34.1 5.5 550 0.25
12 31.2 6.5 550 0.25
13 28.8 7.0 550 0.25
15 25.0 9.0 600 0.25
16 23.4 10 600 0.25
18 20.8 12 650 0.25
20 18.7 14 650 0.25
22 17.0 17.5 650 0.25
1N5934A
1N5935A
1N5936A
1N5937A
1N5938A
1N5939A
1N5940A
1N5941A
1N5942A
1N5943A
1N5944A
24 15.6 19 700 0.25
27 13.9 23 700 0.25
30 12.5 26 750 0.25
33 11.4 33 800 0.25
36 10.4 38 850 0.25
39 9.6 45 900 0.25
43 8.7 53 950 0.25
47
8.0
67
1000
0.25
51
7.3
70
1100
0.25
56
6.7
86
1300
0.25
62 6.0 100 1500 0.25
1N5945A
1N5946A
1N5947A
1N5948A
1N5949A
1N5950A
1N5951A
1N5952A
1N5953A
1N5954A
1N5955A
68 5.5 120 1700 0.25
75 5.0 140 2000 0.25
82 4.6 160 2500 0.25
91 4.1 200 3000 0.25
100 3.7 250 3100 0.25
110 3.4 300 4000 0.25
120 3.1 380 4500 0.25
130 2.9 450 5000 0.25
150 2.5 600 6000 0.25
160 2.3 700 6500 0.25
180 2.1 900 7000 0.25
1N5956A
1N5957A
200
1.9
1200
8000
0.25
240
1.5
1600
9000
0.25
Note :
( 1 ) Suffix " A " indicates ± 10% tolerance, suffix " B " indicates ± 5.0% tolerance.
Maximum Reverse
Leakage Current
IR @ VR
(µA)
(V)
100 1.0
75 1.0
25 1.0
5.0 1.0
5.0 1.5
5.0 2.0
5.0 3.0
5.0 4.0
50 5.2
50 6.0
50 6.5
50 7.0
50 8.0
50 8.4
1.0 9.1
1.0 9.9
1.0 11.4
1.0 12.2
1.0 13.7
1.0 15.2
1.0 16.7
1.0 18.2
1.0 20.6
1.0 22.8
1.0 25.1
1.0 27.4
1.0 29.7
1.0 32.7
1.0 35.8
1.0 38.8
1.0 42.6
1.0 47.1
1.0 51.7
1.0 56.0
1.0 62.2
1.0 69.2
1.0 76.0
1.0 83.6
1.0 91.2
1.0 98.8
1.0 114.0
1.0 121.6
1.0 136.8
1.0 152.0
1.0 182.4
Maximum DC
Zener Current
IZM
(mA)
454
416
384
348
319
294
267
241
220
200
182
164
150
136
125
115
100
93
83
75
68
62
55
50
45
41
38
34
31
29
26
24
22
20
18
16
15
13
12
11
10
9.0
8.0
7.0
6.0


Part Number 1N5917A
Description SILICON ZENER DIODES
Maker EIC discrete Semiconductors
Total Page 2 Pages
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