TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
GBPC35005 - GBPC3510
PRV : 50 - 1000 Volts
Io : 35 Amperes
FEATURES :
* Glass passivated junction chip
* High surge current capability
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-0 rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
GLASS PASSIVATED SINGLE-
PHASE BRIDGE RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.137(28.90)
0.618(15.70) 1.114(28.30)
0.658(16.70)
0.618(15.70)
0.210(5.30)
0.200(5.10)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.252(6.40)
0.248(6.30)
φ0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise noted.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50 °C (Fig.1)
Peak Forward Surge Current Single Sine Wave
Superimposed on Rated Load
Rating for fusing (non-repetitive, 1ms < t < 8.3 ms)
Maximum Instantaneous Forward
Voltage Drop Per Diode
at IF = 17.5 A
Maximum DC Reverse Current at
Ta = 25 °C
Rated DC Blocking Voltage Per Diode Ta = 125 °C
Typical Junction Capacitance Per Diode (at 4 V, 1MHz)
Typical Thermal Resistance form Junction to Case (1)
Operating Junction and Storage Temperature Range
SYMBOL GBPC GBPC GBPC GBPC GBPC GBPC GBPC
35005 3501 3502 3504 3506 3508 3510
VRRM
50 100 200 400 600 800 1000
VRMS 35 70 140 280 420 560 700
VDC 50 100 200 400 600 800 1000
IF(AV)
35
UNIT
V
V
V
A
IFSM 400 A
I2t 660 A2sec
VF 1.1 V
IR
IR(H)
CJ
RӨJC
TJ, TSTG
5
500
300
1.4
- 55 to + 150
μA
μA
pF
°C/W
°C
Note : (1) With heatsink
Page 1 of 2
Rev. 00 : June 24, 2009
