BAS216WS Datasheet | EIC Semiconductor

FEATURES : - Ultra small plastic SMD package - High switching speed: max. 4 ns - Reverse voltage: max. 75 V - Repetitive peak reverse voltage: max. 85 V - Pb / Ro HS Free MECHANICAL DATA : - Case : SOD-323 plastic Case - Weight : approx. 0.004 g 2.80 2.30 Dimensions in millimeters 0.15(max) ABSOLUTE MAXIMUM RATINGS ( Ta = 25 °C unless otherwise specified) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Forward Current Maximum Non-repetitive Peak Forward Current Power Dissipation Junction Temperature Storage Temperature Range t = 1 µs t = 1 ms t =1s Symbol VRRM VR IF IFSM Ptot TJ TSTG Value 85 75 250 4.0 1.0 0.5 400 150 -65 to +150 Unit V V m A A m W °C °C ELECTRICAL CHARACTERISTICS ( Ta = 25 °C unless otherwise specified) Parameter Forward Voltage Reverse Current Diode Capacitance Reverse Recovery Time Test Condition IF = 1 m A IF = 10 m A IF = 50 m A IF = 150 m A VR = 25 V VR = 75 V VR = 25 V , Tj = 150 °C VR = 75 V , Tj = 150 °C VR = 0 V, f = 1 MHz when switched from IF = 10 m A to IR = 10m A; RL =100 Ω; measure at IR = 1 m A Symbol VF IR Ctot Trr Max. 715 855 1.00 1.25 30 1.0 30 50 1.5 Unit m V m V V V n A µA µA µA p F ns Page 1 of 2 Rev. 01 : March 20, 2008 .eicsemi. RATINGS AND CHARACTERISTIC CURVES ( BAS216WS ) FORWARD CURRENT, (m A) FIG.1 - MAXIMUM PERMISSIBLE TOTAL POWER DISSIPATION AS A FUNCTION OF AMBIENT...