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11ES1 - SILICON RECTIFIER DIODES

Key Features

  • :.
  • High current capability.
  • High surge current capability.
  • High reliability.
  • Low reverse current.
  • Low forward voltage drop.
  • Pb / RoHS Free.

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Datasheet Details

Part number 11ES1
Manufacturer EIC
File Size 27.16 KB
Description SILICON RECTIFIER DIODES
Datasheet download datasheet 11ES1 Datasheet

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11ES2 SILICON RECTIFIER DIODES
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.eicsemi.com 11ES1 - 11ES2 SILICON RECTIFIER DIODES PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram DO - 41 0.107 (2.7) 0.080 (2.0) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.