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GP801DDS18 Datasheet, Dynex Semiconductor

GP801DDS18 module equivalent, dual switch low vce(sat) igbt module.

GP801DDS18 Avg. rating / M : 1.0 rating-11

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GP801DDS18 Datasheet

Features and benefits

s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC.

Application

s s s s 12(C2) 2(C2) 4(E2) 1(E1) 7(C ) 1 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) High Reliability Inverters Motor Controllers.

Image gallery

GP801DDS18 Page 1 GP801DDS18 Page 2 GP801DDS18 Page 3

TAGS
GP801DDS18
Dual
Switch
Low
VCESAT
IGBT
Module
GP801DDM18
GP801DCM18
GP801DCS18
Dynex Semiconductor
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