GP800DDM12 information equivalent, hi-reliability dual switch igbt module advance information.
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High Thermal Cycling Capability 800A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max.
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High Reliability Inverters Motor Controllers Traction Drives Resonant Converters
12(C2) 2(C2) 4(E2) 1(E1) 7(C1.
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