DIM100WHS17-A000 - IGBT Power Module

Datasheet Summary

Features

I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY.

Dynex Semiconductor

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Datasheet Details

Part number	DIM100WHS17-A000
Manufacturer	Dynex Semiconductor
File Size	321.59 KB
Description	IGBT Power Module
Datasheet	DIM100WHS17-A000 Datasheet
Additional preview pages of the DIM100WHS17-A000 datasheet.

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www.DataSheet4U.com DIM100WHS17-A000 DIM100WHS17-A000 Half Bridge IGBT Module PDS5715-1.1 Febuary 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 100A 200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I Inverters 7(E2) Motor Controllers 6(G2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM100WHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area DataSheet4U.

Published: Sep 13, 2006 |