DIM400DDS12-A000 igbt equivalent, dual switch igbt.
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*8 ±100.µ2s Short Circuit Withstand
* Non4P4un±c0h.2Through Silicon
* Isolated 5C7u B±a0s.2e with Al2O3 Substrates
* Lead Free Construction
KEY PARAMETE.
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductanc.
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