DIM250PHM33-TL000 - Half Bridge IGBT

Features

Low VCE(sat) Device.
10µs Short Circuit Withstand.
High Thermal Cycling Capability.
High Current Density Enhanced DMOS SPT.
Isolated AlSiC Base with AlN Substrates KEY.

Dynex

Datasheet Details

Part number	DIM250PHM33-TL000
Manufacturer	Dynex
File Size	305.51 KB
Description	Half Bridge IGBT
Datasheet	DIM250PHM33-TL000 Datasheet
Additional preview pages of the DIM250PHM33-TL000 datasheet.

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Full PDF Text Transcription

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DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES  Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 3300V 2.0V 250A 500A * Measured at the auxiliary terminals APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Auxiliaries  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.

Published: Apr 7, 2016 |