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Diotec Semiconductor

PST1600G Datasheet Preview

PST1600G Datasheet

(PST1600x) Silicon Rectifiers - Half Bridge

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PST1600A ... PST1600M
Version 2007-07-06
www.datasheet4u.com
10±0.2
4 3.8
Type
Typ
123
4
1.5 1 2 3
0.9
2.54
Dimensions - Maße [mm]
PST1600A ... PST1600M
Silicon Rectifiers – Half Bridge
Silizium-Gleichrichter – Halbbrücke
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
16 A
50...1000 V
TO-220AB
1.8 g
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V] 1)
PST1600A
PST1600B
PST1600D
PST1600G
PST1600J
PST1600K
PST1600M
50
100
200
400
600
800
1000
50
100
200
400
600
800
1000
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
VF [V] 1), Tj = 25°C
IF = 5 A
IF = 8 A
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 100°C
TC = 100°C
f > 15 Hz
IFAV
IFAV
IFRM
TA = 25°C
IFSM
TA = 25°C
i2t
Tj
TS
8 A 1)
16 A 2)
30 A 3)
135/150 A 1)
90 A2s 1)
-50...+150°C
-50...+175°C
1 Per diode – Pro Diode
2 Output current when operating two devices in a full bridge configuration
Ausgangstrom bei Betrieb zweier Bauteile als Vollbrücke
3 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1




Diotec Semiconductor

PST1600G Datasheet Preview

PST1600G Datasheet

(PST1600x) Silicon Rectifiers - Half Bridge

No Preview Available !

Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
www.dataWshäeremt4euw.ciodmerstand Sperrschicht – Gehäuse
Tj = 25°C VR = VRRM
PST1600A ... PST1600M
Kennwerte
IR < 10 µA
RthC < 2.5 K/W 1)
120
[%]
100
80
60
40
20
IFAV
0
0 TC 50 100 150 [°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
102
[A]
10
Tj = 125°C
1 Tj = 25°C
10-1
IF
10-2
200a-(5a-0.95v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Per diode – Pro Diode
2
http://www.diotec.com/
© Diotec Semiconductor AG


Part Number PST1600G
Description (PST1600x) Silicon Rectifiers - Half Bridge
Maker Diotec Semiconductor
PDF Download

PST1600G Datasheet PDF






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