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P2000D Datasheet Preview

P2000D Datasheet

Silicon Rectifier Diodes

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P2000A ... P2000M
P2000A ... P2000M
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2013-01-24
Nominal current
Nennstrom
Ø 8±0.1
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Type Weight approx.
Gewicht ca.
Ø 1.2±0.05
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
20 A
50...1000 V
Ø 8 x 7.5 [mm]
2.0 g
Maximum ratings
Type
Typ
P2000A
P2000B
P2000D
P2000G
P2000J
P2000K
P2000M
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
600
800
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TA = 50°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
IFRM
IFSM
i2t
Tj
TS
20 A 1)
100 A 1)
500/550 A
1250 A2s
-50...+175°C
-50...+175°C
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
1
http://www.diotec.com/
© Diotec Semiconductor AG




Diotec

P2000D Datasheet Preview

P2000D Datasheet

Silicon Rectifier Diodes

No Preview Available !

Characteristics
Forward voltage – Durchlass-Spannung
Tj = 25°C
Tj = 25°C
Leakage current – Sperrstrom
Tj = 25°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to leads
Wärmewiderstand Sperrschicht – Anschlussdraht
IF = 5 A
IF = 20 A
VR = VRRM
VF
IR
RthA
RthL
P2000A ... P2000M
Kennwerte
< 0.87 V
< 1.10 V
< 10 µA
< 4 K/W 1)
< 2.0 K/W
120
[%]
100
80
60
40
20
IFAV
0
0 TA 50 100 150 [°C]
Rated forward current versus ambient temperature1)
Zul. Richtstrom in Abh. von der Umgebungstemp.1)
103
[A]
10 3
[A]
10 2
Tj = 125°C
Tj = 25°C
10
1
IF
10 -1
400a-(5a-0.9v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
102
îF
10
1
10 102 [n]
Peak forward surge current versus number of cycles at 50 Hz
Durchlass-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
103
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG


Part Number P2000D
Description Silicon Rectifier Diodes
Maker Diotec
Total Page 2 Pages
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