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BC546A Datasheet Preview

BC546A Datasheet

General Purpose NPN Transistors

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BC546 ... BC549
BC546 ... BC549
General Purpose NPN Transistors
Universal-NPN-Transistoren
IC = 100 mA
hFE ~ 110/200/420
Tjmax = 150°C
VCEO = 30...65 V
Ptot = 500 mW
Version 2018-02-01
TO-92 (10D3)
CBE
2 x 2.54
Typical Applications
Signal processing,
(1) Switching, Amplification
Commercial grade 1)
Features
General Purpose
Three current gain groups
Compliant to RoHS, REACH,
Conflict Minerals 1)
Mechanical Data 1)
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Besonderheiten
Universell anwendbar
Drei Stromverstärkungsklassen
RoHS
Pb
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanische Daten 1)
4.6±0.1
(1) Taped in ammo pack
(2)
(Raster 2.54)
(2) On request: in bulk
(Raster 1.27, suffix “BK”)
4000
5000
(1) Gegurtet in Ammo-Pack
(Raster 2.54)
(2) Auf Anfrage: Schüttgut
(Raster 1.27, Suffix “BK”)
CBE
Weight approx.
Case material
0.01 g
UL 94V-0
Gewicht ca.
Gehäusematerial
2 x 1.27
Solder & assembly conditions
260°C/10s
MSL N/A
Löt- und Einbaubedingungen
Dimensions - Maße [mm]
Current gain groups
Stromverstärkungsgruppen
BC546A
BC547A
BC548A
BC549A
BC546B
BC547B
BC548B
BC549B
BC546C
BC547C
BC548C
BC549C
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC556 ... BC559
Maximum ratings 2)
Collector-Emitter-voltage – Kollektor-Emitter-Spannung
Collector-Emitter-voltage – Kollektor-Emitter-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
C open
C open
DC
VCES
VCEO
VEBO
VEBO
Ptot
IC
ICM
IBM
- IEM
Tj
TS
BC546
80 V
65 V
80 V
Grenzwerte 2)
BC547 BC548/549
50 V
30 V
45 V
30 V
50 V
30 V
5V
500 mW 3)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
3 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1




Diotec

BC546A Datasheet Preview

BC546A Datasheet

General Purpose NPN Transistors

No Preview Available !

BC546 ... BC549
Characteristics
DC current gain – Kollektor-Basis-Stromverhältnis 1)
Tj = 25°C
VCE = 5 V
IC = 10 µA
Group A
Group B
Group C
hFE
IC = 2 mA
Group A
Group B
Group C
hFE
IC = 100 mA
Group A
Group B
Group C
hFE
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE =
80 V
50 V
30 V
B-E short
BC546
BC547
BC548 / BC549
ICES
VCE =
80 V
50 V
30 V
B-E short
Tj = 125°C
BC546
BC547
BC548 / BC549
ICES
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 1)
IC = 10 mA
IC = 100 mA
IB = 0.5 mA
IB = 5 mA
VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1)
IC = 10 mA
IC = 100 mA
IB = 0.5 mA
IB = 5 mA
VBEsat
Base-Emitter-voltage – Basis-Emitter-Spannung 1)
VCE = 5 V
VCE = 5 V
IC = 2 mA
IC = 10 mA
Gain-Bandwidth Product – Transitfrequenz
VBE
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
CCBO
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
CEBO
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
F
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
RthA
Min.
110
200
420
580 mV
Typ.
Kennwerte
Max.
90 –
150 –
270 –
– 220
– 450
– 800
120 –
200 –
400 –
0.2 nA
15 nA
4 µA
80 mV
200 mV
250 mV
600 mV
700 mV
900 mV
660 mV
700 mV
770 mV
300 MHz
3.5 pF
6 pF
9 pF –
2 dB
1.2 dB
< 200 K/W 2)
10 dB
4 dB
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG


Part Number BC546A
Description General Purpose NPN Transistors
Maker Diotec
Total Page 2 Pages
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