ZNBG4003 Datasheet | Diodes Incorporated

Features - Four stage FET bias controller Operating range of 5.0V to 8.0V FET drain voltages set at 2.0V FET drain current selectable from 0 to 15m A Allows first and second stage FETs to be run at different (optimum) drain currents FET drain voltages and currents stable over temperature FETs protected against overstress during power-up and power-down. Internal negative supply generator allowing single supply operation (available for external use) Low external ponent count Pin Assignments G1 D1 VCC D3 G3 D4 G4 RCAL1 CSUB CNB1 RCAL2 CNB2 NEW PRODUCT - - - - - - - - D2 G2 VCC GND Top View CSUB Applications - - - - - Two single type Twin LNB’s Twin LNB’s Quad LNB’s Microwave links PMR and Cellular telephone systems Bottom View Single Universal LNB System Diagram   Vertic al Gain stages Ga As FET’s Down Converter IF Switching, gain and control Horizontal ZNBG ZABG 4002 4003 6002 ZXHF 5002 Document number: DS35007 Rev. 1 - 2 1 of 7 .diodes. August 2010 © Diodes Incorporated Data Sheet.in A Product Line of Diodes Incorporated Device Description The ZNBG series of devices are designed to meet the bias requirements of Ga As and HEMT FETs monly used in satellite receiver LNBs with a minimum of external ponents. The ZNBG4003 provides four FET bias stages, arranged in two pairs of two. Resistors connected to pins Rcal1 and Rcal2 set the FET drain currents of each pair over the range of 0 to 15m A, allowing input FETs to be biased for optimum noise and amplifier FETs for optimum gain. Drain voltages of all stages are set at 2.0V. The drain supplies are current limited to approximately 5% above the operating currents set by the Rcal resistors. Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The ZNBG4003 includes an integrated switched capacitor DC-DC converter generating a regulated output of -2.5V to allow single supply operation. These devices are unconditionally stable over the full working...