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DMS3014SFG - 30V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters Mec

Key Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
  • Low RDS(ON).
  • minimize conduction losses.
  • Low VSD.
  • reducing the losses due to body diode conduction.
  • Low Qrr.
  • lower Qrr of the integrated Schottky reduces body diode switching losses.
  • Low gate capacitance (Qg/Qgs) ratio.
  • reduces risk of shoot- through or cross conduction currents at high frequen.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION DMS3014SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) max 13mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V ID max TA = 25°C 9.5A 9.