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ZTX796A - PNP MEDIUM POWER TRANSISTOR

Features

  • BVCEO > -200V.
  • IC = -0.5A High Continuous Collector Current.
  • ICM = -1A Peak Pulse Current.
  • TJ up to 200°C for High Temperature Operation.
  • hFE > 250 @ 0.3A for High Gain Hold-Up.
  • PD = 1W Power dissipation.
  • Complementary NPN Type: ZTX696B.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability E-Line (TO-92 Compatible) C B Mechanical Data.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Product Line of Diodes Incorporated ZTX796A 200V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN E-LINE Features  BVCEO > -200V  IC = -0.5A High Continuous Collector Current  ICM = -1A Peak Pulse Current  TJ up to 200°C for High Temperature Operation  hFE > 250 @ 0.3A for High Gain Hold-Up  PD = 1W Power dissipation  Complementary NPN Type: ZTX696B  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free.