Datasheet4U Logo Datasheet4U.com

ZABG4002 - Advanced Low Power Four-Stage GaAs FET Bias IC

Description

The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with a minimum of external components whilst operating from a minimal voltage supply and using minimal current.

Features

  • NEW.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZAB 6 AMPERE AXIAL LEAD RECTIFIERS HIGH SURGE EDI
ZABDC50-150HP Bi-Directional Coupler Mini-Circuits
ZABT-2R15G+ Bias -Tee / Diplexer Mini-Circuits

Other Datasheets by Diodes Incorporated

Part Number Description
ZABG4003 4 STAGE FET LNA BIAS CONTROLLER
ZABG6002 LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
ZABG6003 6 STAGE FET LNA BIAS CONTROLLER
ZABG6004 6 STAGE FET LNA BIAS CONTROLLER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
A Product Line of Diodes Incorporated ZABG4002 LOW POWER 4 STAGE FET LNA BIAS CONTROLLER Summary The ZABG4002 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s (LNB’s), but its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provides each FET with an independent protected negative gate voltage and positive drain voltage with user programmable drain current. Combining an advanced IC process and packaging techniques, the ZABG4002 helps minimise power consumption, component cost and PCB area whilst enhancing overall reliability. Features NEW PRODUCT • • • • • • • • • • • Four stage FET bias controller Operating range of 3.0V to 8.0V Low quiescent supply current, 1.
Published: |