FZT751Q transistor equivalent, pnp high performance transistor.
* BVCEO > -60V
* IC = -3A High Continuous Current
* ICM = -6A Peak Pulse Current
* Low Saturation Voltage VCE(sat) < -300mV @ -1A
* Complementary NPN .
Features
* BVCEO > -60V
* IC = -3A High Continuous Current
* ICM = -6A Peak Pulse Current
* Low Saturat.
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
Features
* BVCEO > -60V
* IC = -3A High Continuous Current
* ICM = -6A Peak Pulse Current
* Low Saturation Voltage VCE(s.
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