FZT651Q transistor equivalent, npn high performance transistor.
* BVCEO > 60V
* IC = 3A High Continuous Current
* ICM = 6A Peak Pulse Current
* Low Saturation Voltage VCE(sat) < 300mV @1A
* Complementary PNP Type: .
Features
* BVCEO > 60V
* IC = 3A High Continuous Current
* ICM = 6A Peak Pulse Current
* Low Saturation.
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications.
Features
* BVCEO > 60V
* IC = 3A High Continuous Current
* ICM = 6A Peak Pulse Current
* Low Saturation Voltage VC.
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